vsmb2000x01, VSMB2020X01 www.vishay.com vishay semiconductors rev. 1.5, 23-aug-11 1 document number: 81930 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high speed infrared emitting diodes, 940 nm, gaalas, dh description vsmb2000x01 series are infrared, 940 nm emitting diodes in gaalas (dh) technology wi th high radiant power and high speed, molded in clear, untinte d plastic packages (with lens) for surface mounting (smd). applications ? irda compatible data transmission ? miniature light barrier ? photointerrupters ? optical switch ? control and drive circuits ? shaft encoders features ? package type: surface mount ? package form: gw, rgw ? dimensions (l x w x h in mm): 2.3 x 2.3 x 2.8 ? aec-q101 qualified ? peak wavelength: ? p = 940 nm ? high reliability ? high radiant power ? high radiant intensity ? angle of half intensity: ? = 12 ? low forward voltage ? suitable for high pulse current operation ? terminal configurations: gu llwing or reserve gullwing ? package matches with de tector vemd2000x01 series ? floor life: 4 weeks, msl 2a, acc. j-std-020 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec note ** please see document vishay material category policy: www.vishay.com/doc?99902 note ? test conditions see table basic characteristics note ? moq: minimum order quantity 21725-4 21 7 2 5- 4 vsmb2000x01 VSMB2020X01 product summary component i e (mw/sr) ? (deg) ? p (nm) t r (ns) vsmb2000x01 40 12 940 15 VSMB2020X01 40 12 940 15 ordering information ordering code packaging remarks package form vsmb2000x01 tape and reel moq: 6000 pc s, 6000 pcs/reel reverse gullwing VSMB2020X01 tape and reel moq: 6000 pcs, 6000 pcs/reel gullwing absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p ? 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1a power dissipation p v 160 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature t ? 5 s t sd 260 c thermal resistance junction/ambient j-std-051, leads 7 mm, soldered on pcb r thja 250 k/w
vsmb2000x01, VSMB2020X01 www.vishay.com vishay semiconductors rev. 1.5, 23-aug-11 2 document number: 81930 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - power dissipation limit vs. ambient temperature fig. 2 - forward current limit vs. ambient temperature 0 20 40 60 80 100 120 140 160 180 0 102030405060708090100 21343 t amb - ambient temperature (c) p v - power dissipation (mw) r thja = 250 k/w 0 20 40 60 80 100 120 0 10 203040 50607080 90100 21344 r thja = 250 k/w t amb - ambient temperature (c) i f - forward current (ma) basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.15 1.35 1.6 v i f = 1 a, t p = 100 s v f 2.2 v temperature coefficient of v f i f = 1 ma tk vf - 1.8 mv/k i f = 100 ma tk vf - 1.1 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 mw/cm 2 c j 70 pf radiant intensity i f = 100 ma, t p = 20 ms i e 20 40 60 mw/sr i f = 1 a, t p = 100 s i e 330 mw/sr radiant power i f = 100 ma, t p = 20 ms ? e 40 mw temperature coefficient of radiant power i f = 1 ma tk ? e - 1.1 %/k i f = 100 ma tk ? e - 0.51 %/k angle of half intensity ? 12 deg peak wavelength i f = 30 ma ? p 920 940 960 nm spectral bandwidth i f = 30 ma ?? 25 nm temperature coefficient of ? p i f = 30 ma tk ? p 0.25 nm/k rise time i f = 100 ma, 20 % to 80 % t r 15 ns fall time i f = 100 ma, 20 % to 80 % t f 15 ns cut-off frequency i dc = 70 ma, i ac = 30 ma pp f c 23 mhz virtual source diameter d 1.5 mm
vsmb2000x01, VSMB2020X01 www.vishay.com vishay semiconductors rev. 1.5, 23-aug-11 3 document number: 81930 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 3 - forward current vs. forward voltage fig. 4 - relative forward voltage vs. ambient temperature fig. 5 - radiant intensity vs. forward current fig. 6 - relative radiant in tensity vs. ambient temperature fig. 7 - relative radi ant power vs. wavelength fig. 8 - relative radiant in tensity vs. angular displacement 1 10 100 1000 01 23 t p = 100 s t p /t= 0.001 v f - forward voltage (v) 21534 i f - forward current (ma) 90 92 94 96 98 100 102 104 106 108 110 - 40 - 20 0 20 40 60 80 100 t amb - ambient temperature (c) v f, rel - relative forward voltage (%) i f = 100 ma i f = 10 ma i f = 1 ma 21443 t p = 20 ms 0.1 10 100 1000 1 100 1000 t p = 100 s t p /t= 0.001 i f - forward current (ma) i e - radiant intensity (mw/sr) 1 10 40 60 80 100 120 140 160 180 - 60 - 40 - 20 0 20 40 60 80 100 t amb - ambient temperature (c) i e rel - relative radiant intensity (%) t p = 20 ms i f = 1 ma 21444 i f = 100 ma 0 10 20 30 40 50 60 70 80 90 100 840 880 920 960 1000 1040 - wavelength (nm) 21445 e rel - relative radiant power (%) i f = 30 ma 0.4 0.2 0 i e rel - relative radiant intensity 21550 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - angular displacement
vsmb2000x01, VSMB2020X01 www.vishay.com vishay semiconductors rev. 1.5, 23-aug-11 4 document number: 81930 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 solder profile fig. 9 - lead (pb)-free reflow solder profile acc. j-std-020 drypack devices are packed in moisture barrier bags (mbb) to prevent the products from moisture absorption during transportation and storage. each bag contains a desiccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated on mbb label: floor life: 4 weeks conditions: t amb < 30 c, rh < 60 % moisture sensitivity leve l 2a, acc. to j-std-020. drying in case of moisture absorpti on devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry using recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. package dimensions in millimeters: vsmb2000 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19841 255 c 2.2 5.8 0.2 2.77 0.2 2.3 0.2 cathode 0.5 0.05 0.1 0.254 1.1 0.1 anode 0.4 2.2 0.19 0.3 1.6 0.4 z ? 1.8 0.1 2.3 0.2 s pecification s according to din technical drawing s not indicated tolerance s 0.1 drawing-no.: 6.544-5391.02-4 pin id expo s ed copper i ss ue: 2; 18.03.10 21517 0.75 6.7 1.7 ? 2.3 0.1 s older pad propo s al acc. ipc 7351 z 20:1
vsmb2000x01, VSMB2020X01 www.vishay.com vishay semiconductors rev. 1.5, 23-aug-11 5 document number: 81930 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters: vsmb2020 2.2 4.2 0.2 2.77 0.2 0.05 0.254 0.6 2.2 0.19 0.3 1.6 0.4 ? 1.8 specifications according to din technical drawings not indicated tolerances 0.1 drawing-no.: 6.544-5383.02-4 issue: 4; 18.03.10 exposed copper 0.75 2.45 5.15 solder pad proposal acc. ipc 7351 21488 x x 20:1 cathode anode 0.4 2.3 0.2 2.3 0.2 0.5 pin id
vsmb2000x01, VSMB2020X01 www.vishay.com vishay semiconductors rev. 1.5, 23-aug-11 6 document number: 81930 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 taping and reel dimensions in millimeters : vsmb2000 issue: 2; 18.03.10 drawing-no.: 9.800-5100.01-4 leader and trailer tape: parts mounted empty (400 mm min.) empty (160 mm min.) direction of pulling out unreel direction ? 62 0.5 ? 330 1 reel 2 . 5 0.5 label posted here coming out from reel tape position x ? 1 3 0.5 12.4 1.5 x 2:1 i ii 6000 pcs/reel 12 0.3 5.5 0.05 1.75 0.1 2 0.05 4 0.1 4 0.1 ? 1.55 0.05 3.05 0.1 21572 technical drawings according to din specifications terminal position in tape devicce vemd2000 vemd2500 cathode anode anode cathode vsmb2000 vsmg2000 vsmy2850rg vemt2000 vemt2500 collector emitter lead i lead ii
vsmb2000x01, VSMB2020X01 www.vishay.com vishay semiconductors rev. 1.5, 23-aug-11 7 document number: 81930 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 taping and reel dimensions in millimeters : vsmb2020 drawing-no.: 9.800-5091.01-4 leader and trailer tape: parts mounted empty (400 mm min.) empty (160 mm min.) direction of pulling out unreel direction ? 62 0.5 ? 330 1 reel 2 . 5 0.5 label posted here coming out from reel tape position x ? 13 0.5 12.4 1.5 x 2:1 i ii 6000 pcs/reel 12 0.3 5.5 0.05 1.75 0.1 2 0.05 4 0.1 4 0.1 ? 1.55 0.05 3.05 0.1 21571 technical drawings according to din specifications issue: 3; 18.03.10 terminal position in tape devicce vsmb2020 vsmg2020 cathode anode anode cathode vemd2020 vemd2520 vsmy2850g vemt2020 vemt2520 collector emitter lead i lead ii
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